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40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba

40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba
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40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba
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40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba

 

Type Designator: GT40QR21

Marking Code: 40QR21

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 230

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9

Maximum Gate-Emitter Voltage |Veg|, V: 25

Maximum Collector Current |Ic|, A: 40

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 120

Package: TO3P

Package Include:

1 x 40QR21 Silicon N-Channel IGBT

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